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HCS151MS
September 1995
Radiation Hardened 8-Input Multiplexer
Pinouts
16 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE (SBDIP) MIL-STD-1835 CDIP2-T16 TOP VIEW
I3 I2 I1 I0 Y Y E GND 1 2 3 4 5 6 7 8 16 VCC 15 I4 14 I5 13 I6 12 I7 11 S0 10 S1 9 S2
Features
* 3 Micron Radiation Hardened SOS CMOS * Total Dose 200K RAD (Si) * SEP Effective LET No Upsets: >100 MEV-cm2/mg * Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/ Bit-Day (Typ) * Dose Rate Survivability: >1 x 1012 RAD (Si)/s * Dose Rate Upset >10
10
RAD (Si)/s 20ns Pulse
* Cosmic Ray Upset Immunity 2 x 10-9 Error/Gate Day (Typ) * Latch-Up Free Under Any Conditions * Military Temperature Range: -55oC to +125oC * Significant Power Reduction Compared to LSTTL ICs * DC Operating Voltage Range: 4.5V to 5.5V * Input Logic Levels - VIL = 30% of VCC Max - VIH = 70% of VCC Min * Input Current Levels Ii 5A at VOL, VOH
I3 I2 I1 I0 Y Y E GND
16 LEAD CERAMIC METAL SEAL FLATPACK PACKAGE (FLATPACK) MIL-STD-1835 CDFP4-F16 TOP VIEW
1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 VCC I4 I5 I6 I7 S0 S1 S2
Description
The Intersil HCS151MS is a Radiation Hardened 8-Input Multiplexer having three binary control inputs (S0, S1, S2) and an active low enable (E) input. The three binary signals select one of eight channels. Outputs are both inverting and non-inverting. The HCS151MS utilizes advanced CMOS/SOS technology to achieve high-speed operation. This device is a member of radiation hardened, high-speed, CMOS/SOS Logic Family. The HCS151MS is supplied in a 16 lead Ceramic flatpack (K suffix) or a SBDIP Package (D suffix).
Ordering Information
PART NUMBER HCS151DMSR HCS151KMSR HCS151D/Sample HCS151K/Sample HCS151HMSR TEMPERATURE RANGE -55oC to +125oC -55oC to +125oC +25oC +25oC +25oC SCREENING LEVEL Intersil Class S Equivalent Intersil Class S Equivalent Sample Sample Die PACKAGE 16 Lead SBDIP 16 Lead Ceramic Flatpack 16 Lead SBDIP 16 Lead Ceramic Flatpack Die DB NA
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright (c) Intersil Corporation 1999
Spec Number File Number
163
518753 3077.1
HCS151MS Functional Diagram
I0 I1 I2 I3 I4 I5 I6 I7
S0 S1 S2
S0 S1 S2
S0 S1 S2
S0 S1 S2
S0 S1 S2
S0 S1 S2
S0 S1 S2
S0 S1 S2
7 E 16 VCC 8 GND 11 S0 S0 10 S1 S1 9 6 Y Y 8 S2 S2 S2 S1 S0
TRUTH TABLE INPUTS E H L L L L L L L L L L L L L L L L S0 X L L L L L L L L H H H H H H H H S1 X L L L L H H H H L L L L H H H H S2 X L L H H L L H H L L H H L L H H I0 X L H X X X X X X X X X X X X X X I1 X X X L H X X X X X X X X X X X X I2 X X X X X L H X X X X X X X X X X I3 X X X X X X X L H X X X X X X X X I4 X X X X X X X X X L H X X X X X X I5 X X X X X X X X X X X L H X X X X I6 X X X X X X X X X X X X X L H X X I7 X X X X X X X X X X X X X X X L H OUTPUTS Y H H L H L H L H L H L H L H L H L Y L L H L H L H L H L H L H L H L H
H = High Level, L = Low Level, X = Don't Care
Spec Number 164
518753
Specifications HCS151MS
Absolute Maximum Ratings
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to +7.0V Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VCC +0.5V DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .10mA DC Drain Current, Any One Output. . . . . . . . . . . . . . . . . . . . . . .25mA (All Voltage Reference to the VSS Terminal) Storage Temperature Range (TSTG) . . . . . . . . . . . -65oC to +150oC Lead Temperature (Soldering 10sec) . . . . . . . . . . . . . . . . . . +265oC Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
Reliability Information
Thermal Resistance JA JC SBDIP Package. . . . . . . . . . . . . . . . . . . . 73oC/W 24oC/W Ceramic Flatpack Package . . . . . . . . . . . 114oC/W 29oC/W Maximum Package Power Dissipation at +125oC Ambient SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.68W Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . . . . 0.44W If device power exceeds package dissipation capability, provide heat sinking or derate linearly at the following rate: SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13.7mW/oC Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . 8.8mW/oC
CAUTION: As with all semiconductors, stress listed under "Absolute Maximum Ratings" may be applied to devices (one at a time) without resulting in permanent damage. This is a stress rating only. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. The conditions listed under "Electrical Performance Characteristics" are the only conditions recommended for satisfactory device operation.
Operating Conditions
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V Input Rise and Fall Times at 4.5V VCC (TR, TF) . . . . . . .500ns Max Operating Temperature Range (TA) . . . . . . . . . . . . -55oC to +125oC Input Low Voltage (VIL). . . . . . . . . . . . . . . . . . . 0.0V to 30% of VCC Input High Voltage (VIH) . . . . . . . . . . . . . . . . . . 70% of VCC to VCC
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS GROUP A SUBGROUPS 1 2, 3 Output Current (Sink) IOL VCC = 4.5V, VIH = 4.5V, VOUT = 0.4V, VIL = 0V 1 2, 3 Output Current (Source) IOH VCC = 4.5V, VIH = 4.5V, VOUT = VCC -0.4V, VIL = 0V VCC = 4.5V, VIH = 3.15V, IOL = 50A, VIL = 1.35V VCC = 5.5V, VIH = 3.85V, IOL = 50A, VIL = 1.65V Output Voltage High VOH VCC = 4.5V, VIH = 3.15V, IOH = -50A, VIL = 1.35V VCC = 5.5V, VIH = 3.85V, IOH = -50A, VIL = 1.65V Input Leakage Current IIN VCC = 5.5V, VIN = VCC or GND 1 2, 3 1, 2, 3 LIMITS TEMPERATURE +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC, +125oC, -55oC MIN 4.8 4.0 -4.8 -4.0 MAX 40 750 0.1 UNITS A A mA mA mA mA V
PARAMETER Quiescent Current
SYMBOL ICC
(NOTE 1) CONDITIONS VCC = 5.5V, VIN = VCC or GND
Output Voltage Low
VOL
1, 2, 3
+25oC, +125oC, -55oC
-
0.1
V
1, 2, 3
+25oC, +125oC, -55oC
VCC -0.1 VCC -0.1 -
-
V
1, 2, 3
+25oC, +125oC, -55oC
-
V
1 2, 3
+25oC +125oC, -55oC +25oC, +125oC, -55oC
0.5 5.0 -
A A -
Noise Immunity Functional Test
FN
VCC = 4.5V, VIH = 0.70(VCC), VIL = 0.30(VCC) (Note 2)
7, 8A, 8B
NOTES: 1. All voltages reference to device GND. 2. For functional tests, VO 4.0V is recognized as a logic "1", and VO 0.5V is recognized as a logic "0".
Spec Number 165
518753
Specifications HCS151MS
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS GROUP A SUBGROUPS 9 10, 11 Input to Y TPHL TPLH VCC = 4.5V 9 10, 11 Select to Y TPHL TPLH VCC = 4.5V 9 10, 11 Select to Y TPHL TPLH VCC = 4.5V 9 10, 11 E to Y TPHL TPLH VCC = 4.5V 9 10, 11 E to Y TPHL TPLH VCC = 4.5V 9 10, 11 NOTES: 1. All voltages referenced to device GND. 2. AC measurements assume RL = 500, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = VCC. LIMITS TEMPERATURE +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC MIN 2 2 2 2 2 2 2 2 2 2 2 2 MAX 21 23 24 27 25 29 29 33 17 19 20 21 UNITS ns ns ns ns ns ns ns ns ns ns ns ns
PARAMETER Input to Y
SYMBOL TPHL TPLH
(NOTES 1, 2) CONDITIONS VCC = 4.5V
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS LIMITS PARAMETER Capacitance Power Dissipation SYMBOL CPD CONDITIONS VCC = 5.0V, f = 1MHz NOTES 1 1 Input Capacitance CIN VCC = 5.0V, f = 1MHz 1 1 Output Transition Time TTHL TTLH VCC = 4.5V 1 1 NOTE: 1. The parameters listed in Table 3 are controlled via design or process parameters. Min and Max Limits are guaranteed but not directly tested. These parameters are characterized upon initial design release and upon design changes which affect these characteristics. TEMPERATURE +25oC +125oC +25oC +125oC +25oC +125oC MIN MAX 68 83 10 10 15 22 UNITS pF pF pF pF ns ns
Spec Number 166
518753
Specifications HCS151MS
TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS 200K RAD LIMITS PARAMETER Quiescent Current Output Current (Sink) SYMBOL ICC IOL (NOTES 1, 2) CONDITIONS VCC = 5.5V, VIN = VCC or GND VCC = 4.5V, VIN = VCC or GND, VOUT = 0.4V VCC = 4.5V, VIN = VCC or GND, VOUT = VCC -0.4V VCC = 4.5V and 5.5V, VIH = 0.70(VCC), VIL = 0.30(VCC) at 200K RAD, IOL = 50A VCC = 4.5V and 5.5V, VIH = 0.70(VCC), VIL = 0.30(VCC) at 200K RAD, IOH = -50A VCC = 5.5V, VIN = VCC or GND VCC = 4.5V, VIH = 0.70(VCC), VIL = 0.30(VCC) at 200K RAD, (Note 3) VCC = 4.5V TEMPERATURE +25oC +25oC MIN 4.0 MAX 750 UNITS A mA
Output Current (Source) Output Voltage Low
IOH
+25oC
-4.0
-
mA
VOL
+25oC
-
0.1
V
Output Voltage High
VOH
+25oC
VCC -0.1 -
-
V
Input Leakage Current Noise Immunity Functional Test Input to Y
IIN FN
+25oC +25oC
5 -
A -
TPHL TPLH TPHL TPLH TPHL TPLH TPHL TPLH TPHL TPLH TPHL TPLH
+25oC
2
29
ns
Input to Y
VCC = 4.5V
+25oC
2
34
ns
Select to Y
VCC = 4.5V
+25oC
2
37
ns
Select to Y
VCC = 4.5V
+25oC
2
42
ns
E to Y
VCC = 4.5V
+25oC
2
24
ns
E to Y
VCC = 4.5V
+25oC
2
27
ns
NOTES: 1. All voltages referenced to device GND. 2. AC measurements assume RL = 500, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = VCC. 3. For functional tests, VO 4.0V is recognized as a logic "1", and VO 0.5V is recognized as a logic "0".
TABLE 5. BURN-IN AND OPERATING LIFE TEST, DELTA PARAMETERS (+25oC) GROUP B SUBGROUP 5 5
PARAMETER ICC IOL/IOH
DELTA LIMIT 12A -15% of 0 Hour
Spec Number 167
518753
Specifications HCS151MS
TABLE 6. APPLICABLE SUBGROUPS CONFORMANCE GROUPS Initial Test (Preburn-In) Interim Test I (Postburn-In) Interim Test II (Postburn-In) PDA Interim Test III (Postburn-In) PDA Final Test Group A (Note 1) Group B Subgroup B-5 Subgroup B-6 Group D METHOD 100%/5004 100%/5004 100%/5004 100%/5004 100%/5004 100%/5004 100%/5004 Sample/5005 Sample/5005 Sample/5005 Sample/5005 GROUP A SUBGROUPS 1, 7, 9 1, 7, 9 1, 7, 9 1, 7, 9, Deltas 1, 7, 9 1, 7, 9, Deltas 2, 3, 8A, 8B, 10, 11 1, 2, 3, 7, 8A, 8B, 9, 10, 11 1, 2, 3, 7, 8A, 8B, 9, 10, 11, Deltas 1, 7, 9 1, 7, 9 Subgroups 1, 2, 3, 9, 10, 11 ICC, IOL/H READ AND RECORD ICC, IOL/H ICC, IOL/H ICC, IOL/H
NOTE: 1. Alternate Group A testing in accordance with Method 5005 of MIL-STD-883 may be exercised.
TABLE 7. TOTAL DOSE IRRADIATION TEST CONFORMANCE GROUPS Group E Subgroup 2 METHOD 5005 PRE RAD 1, 7, 9 POST RAD Table 4 READ AND RECORD PRE RAD 1, 9 POST RAD Table 4 (Note 1)
NOTE: Except FN test which will be performed 100% Go/No-Go.
TABLE 8. STATIC AND DYNAMIC BURN-IN TEST CONNECTIONS OSCILLATOR OPEN GROUND 1/2 VCC = 3V 0.5V VCC = 6V 0.5V 50kHz 25kHz
STATIC BURN-IN I TEST CONDITIONS (Note 1) 5, 6 1 - 4, 7 - 15 16 -
STATIC BURN-IN II TEST CONNECTIONS (Note 1) 5, 6 8 1 - 4, 7, 9 - 16 -
DYNAMIC BURN-IN I TEST CONNECTIONS (Note 2) 2, 4, 8, 10, 13, 15 5, 6 1, 3, 9, 12, 14, 16 11 7
NOTES: 1. Each pin except VCC and GND will have a resistor of 10K 5% for static burn-in. 2. Each pin except VCC and GND will have a resistor of 1K 5% for dynamic burn-in.
TABLE 9. IRRADIATION TEST CONNECTIONS OPEN 5, 6 GROUND 8 VCC = 5V 0.5V 1 - 4, 7, 9 - 16
NOTE: Each pin except VCC and GND will have a resistor of 47K 5% for irradiation testing. Group E, Subgroup 2, sample size is 4 dice/wafer 0 failures.
Spec Number 168
518753
HCS151MS Intersil Space Level Product Flow - `MS'
Wafer Lot Acceptance (All Lots) Method 5007 (Includes SEM) GAMMA Radiation Verification (Each Wafer) Method 1019, 4 Samples/Wafer, 0 Rejects 100% Nondestructive Bond Pull, Method 2023 Sample - Wire Bond Pull Monitor, Method 2011 Sample - Die Shear Monitor, Method 2019 or 2027 100% Internal Visual Inspection, Method 2010, Condition A 100% Temperature Cycle, Method 1010, Condition C, 10 Cycles 100% Constant Acceleration, Method 2001, Condition per Method 5004 100% PIND, Method 2020, Condition A 100% External Visual 100% Serialization 100% Initial Electrical Test (T0) 100% Static Burn-In 1, Condition A or B, 24 hrs. min., +125oC min., Method 1015 100% Interim Electrical Test 1 (T1) 100% Delta Calculation (T0-T1) 100% Static Burn-In 2, Condition A or B, 24 hrs. min., +125oC min., Method 1015 100% Interim Electrical Test 2 (T2) 100% Delta Calculation (T0-T2) 100% PDA 1, Method 5004 (Notes 1and 2) 100% Dynamic Burn-In, Condition D, 240 hrs., +125oC or Equivalent, Method 1015 100% Interim Electrical Test 3 (T3) 100% Delta Calculation (T0-T3) 100% PDA 2, Method 5004 (Note 2) 100% Final Electrical Test 100% Fine/Gross Leak, Method 1014 100% Radiographic, Method 2012 (Note 3) 100% External Visual, Method 2009 Sample - Group A, Method 5005 (Note 4) 100% Data Package Generation (Note 5)
NOTES: 1. Failures from Interim electrical test 1 and 2 are combined for determining PDA 1. 2. Failures from subgroup 1, 7, 9 and deltas are used for calculating PDA. The maximum allowable PDA = 5% with no more than 3% of the failures from subgroup 7. 3. Radiographic (X-Ray) inspection may be performed at any point after serialization as allowed by Method 5004. 4. Alternate Group A testing may be performed as allowed by MIL-STD-883, Method 5005. 5. Data Package Contents: * Cover Sheet (Intersil Name and/or Logo, P.O. Number, Customer Part Number, Lot Date Code, Intersil Part Number, Lot Number, Quantity). * Wafer Lot Acceptance Report (Method 5007). Includes reproductions of SEM photos with percent of step coverage. * GAMMA Radiation Report. Contains Cover page, disposition, Rad Dose, Lot Number, Test Package used, Specification Numbers, Test equipment, etc. Radiation Read and Record data on file at Intersil. * X-Ray report and film. Includes penetrometer measurements. * Screening, Electrical, and Group A attributes (Screening attributes begin after package seal). * Lot Serial Number Sheet (Good units serial number and lot number). * Variables Data (All Delta operations). Data is identified by serial number. Data header includes lot number and date of test. * The Certificate of Conformance is a part of the shipping invoice and is not part of the Data Book. The Certificate of Conformance is signed by an authorized Quality Representative.
Spec Number 169
518753
HCS151MS AC Timing Diagrams
VIH VS VIL TPLH TPHL VOH VS VOL TTLH 80% VOL 20% 80% 20% TTHL OUTPUT CL = 50pF RL = 500 INPUT CL RL
AC Load Circuit
DUT TEST POINT
VOH
OUTPUT
AC VOLTAGE LEVELS PARAMETER VCC VIH VS VIL GND HCS 4.50 4.50 2.25 0 0 UNITS V V V V V
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
Spec Number 170
518753
HCS151MS Die Characteristics
DIE DIMENSIONS: 84 x 84 mils 2.13 x 2.13mm METALLIZATION: Type: AlSi Metal Thickness: 11kA 1kA GLASSIVATION: Type: SiO2 Thickness: 13kA 2.6kA WORST CASE CURRENT DENSITY: <2.0 x 105A/cm2 BOND PAD SIZE: 100m x 100m 4 x 4 mils
Metallization Mask Layout
HCS151MS
I2 (2) I3 (1) VCC (16) I4 (15)
I1 (3) (14) I5
I0 (4)
(13) I6
(12) I7
Y (5)
(11) S0
Y (6) (10) S1
(7) E
(8) GND
(9) S2
NOTE: The die diagram is a generic plot from a similar HCS device. It is intended to indicate approximate die size and bond pad location. The mask series for the HCTS151 is TA14467A.
Spec Number 171
518753

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